Increase in drive current by Pt/W protection on short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistors with metal gate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 A, 2004, Pages 6038-6039

  Sato, Hiroshi ^a   Sato, Hiroyuki ^a   Iguchi, Tsuyoshi ^a   Asada, Masahiro ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

CMOSFET; ErSi2; Metal gate; PtSi; Schottky source drain MOSFET; Short channel device; SOI device

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC INVERTERS; INTERFACES (MATERIALS); OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES;

CMOSFET; ERSI2; METAL GATE; PTSI; SCHOTTKY SOURCE/DRAIN MOSFET; SHORT-CHANNEL DEVICE; SOI DEVICE;

MOSFET DEVICES;

EID: 9144234445     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6038     Document Type: Article

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