Self-separation of a Thick AIN layer from a sapphire substrate via interfacial voids formed by the decomposition of sapphire

Applied Physics Express

Volumn 1, Issue 4, 2008, Pages 0450031-0450033

  Kumagai, Yoshinao ^a   Tajima, Jumpei ^a   Ishizuki, Masanari ^a,b   Nagashima, Toru ^b   Murakami, Hisashi ^a   Takada, Kazuya ^b   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOKUYAMA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; PHASE SEPARATION; SAPPHIRE; SUBSTRATES;

ALN LAYERS; ALN SUBSTRATES; COOLING PROCESSES; DISLOCATION DENSITIES; GAS FLOWS; HYDRIDE VAPOR PHASE EPITAXIES; INTERFACIAL VOIDS; OPTICAL TRANSPARENCIES; SAPPHIRE SUBSTRATES; THICK ALN LAYERS;

PHASE INTERFACES;

EID: 57049106347     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.045003     Document Type: Article

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