Suppression of crack generation using high-compressive-strain AlN/sapphire template for hydride vapor phase epitaxy of thick AlN film

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 20-24, 2007, Pages

  Tsujisawa, Kenichi ^a   Kishino, Shinya ^a   Li, Da Bing ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a   Shibata, Tomohiko ^b   Tanaka, Mitsuhiro ^b  

^a MIE UNIVERSITY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

AlN; Crack; HVPE; Stress control; Template

Indexed keywords

COMPRESSIVE STRENGTH; CRACKS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE ROUGHNESS; VAPOR PHASE EPITAXY;

ATOMIC STEPS; HIGH-COMPRESSIVE-STRAIN (HCS); STRESS CONTROL; THERMAL TENSILE STRAIN;

THICK FILMS;

EID: 34547838387     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L552     Document Type: Article

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