SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 1, 2008, Pages

On effects of gate bias on hole effective mass and mobility in strained-ge channel structures

(9) Sawano, Kentarou a Kunishi, Yugo a Satoh, Yuu a Toyama, Kiyohiko b Arimoto, Keisuke c Okamoto, Toru b Usami, Noritaka d Nakagawa, Kiyokazu c Shiraki, Yasuhiro a

a TOKYO CITY UNIVERSITY (Japan)

b UNIVERSITY OF TOKYO (Japan)

c UNIVERSITY OF YAMANASHI (Japan)

d TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CIVIL AVIATION; CLARIFICATION; GALVANOMAGNETIC EFFECTS; GERMANIUM; HALL EFFECT; HALL MOBILITY; HOLE MOBILITY; MODULATION;

CARRIER DENSITIES; CRITICAL EFFECTS; DEVICE PROPERTIES; DOPED STRUCTURES; GATE BIAS DEPENDENCES; GATE BIASES; GE CHANNELS; HOLE EFFECTIVE MASSES; NONPARABOLICITY; SCATTERING MECHANISMS;

MAGNETIC FIELD EFFECTS;

EID: 57049084079 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.011401 Document Type: Article

Times cited : (4)

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