Preparation of LaNiO3 thin films with very low room-temperature electrical resistivity by room temperature sputtering and high oxygen-pressure processing

Thin Solid Films

Volumn 516, Issue 6, 2008, Pages 919-924

  Zhang, X D ^a,b   Meng, X J ^a   Sun, J L ^a   Lin, T ^a   Ma, J H ^a   Chu, J H ^a   Kwon, D Y ^b   Kim, C W ^b   Kim, Bog G ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b Pusan National University   (South Korea)

Author keywords

Amorphous; High oxygen pressure processing (HOPP); LaNiO3 thin film; Sputtering

Indexed keywords

ELECTRIC CONDUCTIVITY; FERROELECTRICITY; INTEGRATED CIRCUITS; LANTHANUM COMPOUNDS; MAGNETRON SPUTTERING; POLYCRYSTALS;

HIGH OXYGEN-PRESSURE PROCESSING (HOPP); ROOM TEMPERATURE SPUTTERING;

THIN FILMS;

EID: 37349075901     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.04.162     Document Type: Article

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