Dielectric response and structure of in-plane tensile strained BaTi O3 thin films grown on the LaNi O3 buffered Si substrate

Applied Physics Letters

Volumn 92, Issue 6, 2008, Pages

  Qiao, Liang ^a   Bi, Xiaofang ^a  

^a BEIHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; PERMITTIVITY; PHASE DIAGRAMS; POLARIZATION; TENSILE STRAIN; THIN FILMS; X RAY DIFFRACTION;

POLYDOMAIN STATES; TEMPERATURE DEPENDENT DIELECTRIC PERMITTIVITY;

BARIUM COMPOUNDS;

EID: 39349096008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2857462     Document Type: Article

References (18)

1. S. Kim and S. Hishita, Thin Solid Films THSFAP 0040-6090 281-282, 449 (1996).
2. H. B. Sharma and H. N. K. Sarma, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(98)00551-3 330, 178 (1998).
3. J. Q. He, E. Vasco, R. Dittmann, and R. H. Wang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.73.125413 73, 125413 (2006).
4. H. D. Kang, W. H. Song, S. H. Sohn, H. J. Jin, S. E. Lee, and Y. K. Chung, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2198801 88, 172905 (2006).
5. M. Jimi, T. Ohnishi, K. Terai, M. Kawasaki, and M. Lippmaa, Thin Solid Films THSFAP 0040-6090 486, 158 (2005).
6. B. Dkhil, E. Defay, and J. Guillan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2430915 90, 022908 (2007).
7. K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L. Q. Chen, D. G. Schlom, and C. B. Eom, Science SCIEAS 0036-8075 10.1126/science.1103218 306, 1005 (2004).
8. A. Petraru, N. A. Pertsev, H. Kohlstedt, U. Poppe, R. Waser, A. Solbach, and U. Klemradt, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2745277 101, 114106 (2007).
9. J. H. Haeni, P. Irvin, W. Chang, R. Uecker, P. Reiche, Y. L. Li, S. Choudhury, W. Tian, M. E. Hawley, B. Craigo, A. K. Tagantsev, X. Q. Pan, S. K. Streiffer, L. Q. Chen, S. W. Kirchoefer, J. Levy, and D. G. Schlom, Nature (London) NATUAS 0028-0836 10.1038/nature02773 430, 758 (2004).
10. E. D. Specht, H. M. Christen, D. P. Norton, and L. A. Boatner, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.80.4317 80, 4317 (1998).
11. A. R. Meier, F. Niu, and B. W. Wessels, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2006.06.026 294, 401 (2006).
12. S. Kim, Y. B. Park, Y. M. Kang, W. J. Park, S. Baik, and A. L. Gruverman, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(97)00270-8 312, 249 (1998).
13. D. Y. Wang, Y. Wang, X. Y. Zhou, H. L. W. Chan, and C. L. Choy, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1938247 86, 212904 (2005).
14. N. A. Pertsev, V. G. Koukhar, R. Waser, and S. Hoffmann, Integr. Ferroelectr. IFEREU 1058-4587 32, 235 (2001).
15. N. A. Pertsev and V. G. Koukhar, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.84.3722 84, 3722 (2000).
16. N. A. Pertsev, A. G. Zembilgotov, S. Hoffmann, R. Waser, and A. K. Tagantsev, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.369338 85, 1698 (1999).
17. F. Tsai and J. M. Cowley, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.112835 65, 1906 (1994).
18. K. S. Lee, J. H. Choi, J. Y. Lee, and S. Baik, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1404424 90, 4095 (2001).