SCOPUS 정보 검색 플랫폼

Volumn 310, Issue 24, 2008, Pages 5266-5269

Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

(8) Zhao, D G a Jiang, D S a Zhu, J J a Liu, Z S a Zhang, S M a Yang, Hui a,b Jahn, U c Ploog, K H c

a INSTITUTE OF SEMICONDUCTORS (China)

b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

A1. Cathodoluminescence; A3. MOCVD; B2. AlGaN

Indexed keywords

CATHODOLUMINESCENCE; CORUNDUM; GALLIUM NITRIDE; LIGHT EMISSION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM;

A1. CATHODOLUMINESCENCE; A3. MOCVD; AL COMPOSITIONS; AL SOURCES; ALGAN FILMS; B2. ALGAN; CATHODOLUMINESCENCE SPECTRUMS; ENERGY SEPARATIONS; FILM SURFACES; FORMATION OF ISLANDS; GAN BUFFER LAYERS; LUMINESCENCE PEAKS; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; MOLE FRACTIONS; SPATIALLY RESOLVED; SURFACE MOBILITIES; VERTICAL DIRECTIONS;

ALUMINUM;

EID: 56949083119 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.167 Document Type: Article

Times cited : (15)

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