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Journal of Crystal Growth

Volumn 273, Issue 1-2, 2004, Pages 74-78

Phase separation in AlGaN/GaN heterojunction grown by metalorganic chemical vapor deposition

(3) Chen, P a Chua, S J a Miao, Z L a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

A1. Phase separation; A3. Metalorganic chemical vapor deposition; B1. Aluminum gallium nitride

Indexed keywords

CRYSTAL GROWTH; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; INTERFACIAL ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SURFACE PHENOMENA; X RAY SPECTROMETERS;

ALUMINUM GALLIUM NITRIDE; COMPLEX-FACETED ISLANDS; LOW-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION (LP-CVD); MICRO-PHOTOLUMINESCENCE;

HETEROJUNCTIONS;

EID: 9944262842 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.019 Document Type: Article

Times cited : (9)

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