SCOPUS 정보 검색 플랫폼

Volumn 40, Issue 4, 2007, Pages 1113-1117

The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis

(7) Wang, X L a Zhao, D G a Jahn, U b Ploog, K b Jiang, D S a Yang, H a Liang, J W a

a INSTITUTE OF SEMICONDUCTORS (China)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; EPILAYERS; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SURFACE MORPHOLOGY;

COMPOSITIONAL INHOMOGENEITY; LOW LATERAL MOBILITY; MICROSCOPIC SCALES;

ALUMINUM GALLIUM NITRIDE;

EID: 33947688135 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/40/4/031 Document Type: Article

Times cited : (3)

References (10)

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