Leakage current characteristics and dielectric breakdown of antiferroelectric Pb0.92La0.08Zr0.95Ti 0.05O3 film capacitors grown on metal foils

Journal of Physics D: Applied Physics

Volumn 41, Issue 20, 2008, Pages

  Ma, Beihai ^a   Kwon, Do Kyun ^a,b   Narayanan, Manoj ^a   Balachandran, U ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b Hankuk Aviation University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROELECTRICITY; BUFFER LAYERS; CAPACITANCE; CAPACITORS; CHEMICALS; DIELECTRIC DEVICES; DIELECTRIC LOSSES; ELECTRIC EQUIPMENT; ELECTRIC FIELDS; HYSTERESIS; LANTHANUM; LEAD; LEAD ALLOYS; LEAKAGE CURRENTS; MAGNETIC MATERIALS; METAL FOIL; NICKEL; NICKEL ALLOYS; NICKEL OXIDE; PERMITTIVITY; ZIRCONIUM;

ANTIFERROELECTRIC; APPLIED ELECTRIC FIELDS; APPLIED FIELDS; BREAKDOWN TIMES; CHEMICAL SOLUTION DEPOSITIONS; CONDUCTIVE BUFFER LAYERS; CURRENT CHARACTERISTICS; DIELECTRIC BREAKDOWNS; FILM CAPACITORS; HIGH TEMPERATURES; INDUCED PHASE TRANSFORMATIONS; INDUCED PHASE TRANSITIONS; INTERFACIAL OXIDES; LANTHANUM NICKEL OXIDES; NICKEL FOILS; PARASITIC EFFECTS; PLZT DEPOSITIONS; PLZT FILMS; RELATIVE PERMITTIVITIES; RELAXATION CURRENTS; ROOM TEMPERATURES; WEIBULL ANALYSES;

PHASE TRANSITIONS;

EID: 56349171824     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/20/205003     Document Type: Article

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