An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead-zirconate-titanate thin film capacitors for memory device applications

Applied Physics Letters

Volumn 69, Issue 26, 1996, Pages 4011-4013

  Chen, Jia Lin ^a   Chen, Hong Ming ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005077717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117854     Document Type: Article

References (14)

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