Native defects and oxygen and hydrogen-related defect complexes in CdTe: Density functional calculations

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Du, Mao Hua ^a   Takenaka, Hiroyuki ^a   Singh, David J ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; CIVIL AVIATION; CONCENTRATION (PROCESS); DEFECT DENSITY; ELECTRIC CURRENTS; ELECTRONIC PROPERTIES; HYDROGEN; OXYGEN; PARTICLE DETECTORS; RADIATION DETECTORS; SEMICONDUCTING INDIUM; TELLURIUM COMPOUNDS;

BAND GAPS; CARRIER COMPENSATIONS; DEEP DONORS; DEEP LEVELS; DEFECT COMPLEXES; DEFECT CONCENTRATIONS; DENSITY-FUNCTIONAL CALCULATIONS; EXTRINSIC DEFECTS; FIRST-PRINCIPLES CALCULATIONS; INSULATING BEHAVIORS; INTRINSIC DEFECTS; NATIVE DEFECTS; SHALLOW ACCEPTORS; TE ANTISITES;

DEFECTS;

EID: 56349154131     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3000562     Document Type: Article

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