Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector crystals

IEEE Transactions on Nuclear Science

Volumn 51, Issue 4 I, 2004, Pages 1864-1868

  Fiederle, M ^a   Fauler, A ^a   Konrath, J ^a   Babentsov, V ^a   Franc, J ^a   James, R B ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

CdTe; CdZnTe; Compensation mechanism; Radiation detectors

Indexed keywords

CDTE; CDZNTE; COMPENSATION MECHANISMS; DOPED CRYSTALS;

CRYSTAL GROWTH; CRYSTALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC INSULATION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; ELECTRONS; POSITRONS; RADIATION DETECTORS; SUBLIMATION;

CADMIUM COMPOUNDS;

EID: 4444358574     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.832958     Document Type: Conference Paper

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