Model considerations on hydrogen distribution in hydrogenated CdTe

Journal of Alloys and Compounds

Volumn 426, Issue 1-2, 2006, Pages 12-21

  Zajdel, P ^a   Kisiel, A ^b   Polit, J ^c   Robouch, B V ^d   Sheregii, E M ^c   Warczewski, J ^a   Cebulski, J ^c   Burattini, E ^e   Marcelli, A ^d   Guidi, M Cestelli ^d   Piccinini, M ^d   Mycielski, A ^f  

^a UNIVERSITY OF SILESIA   (Poland)

^b JAGIELLONIAN UNIVERSITY   (Poland)

^c UNIVERSITY OF RZESZÓW   (Poland)

^d INFN LABORATORI NAZIONALI DI FRASCATI   (Italy)

^e UNIVERSITY OF VERONA   (Italy)

^f INSTITUTE OF PHYSICS   (Poland)

Author keywords

Crystal growth; Impurities in semiconductors; Light absorption and reflection; Semiconductors; X ray diffraction

Indexed keywords

CRYSTAL GROWTH; HYDROGEN; INFRARED RADIATION; LIGHT ABSORPTION; LIGHT REFLECTION; SEMICONDUCTING CADMIUM COMPOUNDS; SPECTRUM ANALYSIS; X RAY DIFFRACTION;

FAR INFRARED (FIR); IMPURITIES IN SEMICONDUCTORS; MIDDLE INFRARED (MIR); REFLECTIVITY SPECTRA;

CRYSTAL LATTICES;

EID: 33750976949     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2006.02.004     Document Type: Article

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