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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 24, 2000, Pages R16279-R16282

Electrical compensation in CdTe and Cd0.9Zn0.1Te by intrinsic defects

(9) Krsmanovic, N a Lynn, K G a Weber, M H a Tjossem, R a Gessmann, Th a Szeles, Cs b Eissler, E E b Flint, J P c Glass, H L c

a WASHINGTON STATE UNIVERSITY (United States)

b II VI Inc (United States)

c HONEYWELL (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM DERIVATIVE; TELLURIUM DERIVATIVE; ZINC DERIVATIVE;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC POTENTIAL; ENERGY; IONIZATION; PRESSURE; SPECTROSCOPY; TEMPERATURE DEPENDENCE;

EID: 0034670908 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.R16279 Document Type: Article

Times cited : (87)

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