Threshold and saturation voltages modeling of carbon nanotube field effect transistors (CNT-FETs)

Nano

Volumn 3, Issue 3, 2008, Pages 195-201

  Marulanda, Jose M ^a   Srivastava, Ashok ^a   Sharma, Ashwani K ^b  

^a LOUISIANA STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

CNT charge; CNT FET modeling; Saturation voltage; Threshold voltage

Indexed keywords

CARBON NANOTUBES; MESFET DEVICES; THRESHOLD VOLTAGE; VECTORS;

ANALYTICAL MODELS; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CHIRAL VECTORS; CNT CHARGE; CNT-FET MODELING; MODEL EQUATIONS; MODELING TECHNIQUES; POTENTIAL DISTRIBUTIONS; SATURATION VOLTAGE; SATURATION VOLTAGES;

FIELD EFFECT TRANSISTORS;

EID: 56349130646     PISSN: 17932920     EISSN: None     Source Type: Journal    
DOI: 10.1142/S1793292008000952     Document Type: Article

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