Field effect transistors-from silicon MOSFETs to carbon nanotube FETs

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 1, Issue , 2002, Pages 103-107

  Wong, H S P ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; GATE DIELECTRICS; MICROELECTRONICS; SILICON;

CARBON NANOTUBE FET; CMOS DEVICES; DOUBLE-GATE FETS; FIELD EFFECTS; METAL GATE ELECTRODES; NANO-METER REGIMES; SILICON CMOS; SILICON GERMANIUM;

FIELD EFFECT TRANSISTORS;

EID: 17444390174     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003155     Document Type: Conference Paper

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