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Volumn 78, Issue 19, 2008, Pages

Interaction effects in conductivity of a two-valley electron system in high-mobility Si inversion layers

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EID: 56349108965     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.195308     Document Type: Article
Times cited : (38)

References (89)
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    • Interaction correction to the conductivity [Eqs. 1 2 3] in the ballistic regime has the form δσ (T) / σD =Tτ [1+15 F0σ / (1+ F0σ)] /π σD.
    • Interaction correction to the conductivity [Eqs. 1 2 3] in the ballistic regime has the form δσ (T) / σD =Tτ [1+15 F0σ / (1+ F0σ)] /π σD.
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    • The quantum correction to the transport scattering rate τ-1 differs from that for the quantum scattering rate τD -1 by the term [1-cos (φ)] in the integrand, where φ is the scattering angle. According to ZNA theory (Ref.), the interaction corrections to the conductivity are determined by backscattering events for which φ≈ π or [1-cos (φ)] ≈2.
    • The quantum correction to the transport scattering rate τ-1 differs from that for the quantum scattering rate τD -1 by the term [1-cos (φ)] in the integrand, where φ is the scattering angle. According to ZNA theory (Ref.), the interaction corrections to the conductivity are determined by backscattering events for which φ≈π or [1-cos (φ)] ≈2.
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    • Our revision of the analysis of SdH data (described in Sec. 3 1) modifies the m* values only at low densities (rs >4) and does not affect m*(rs →0) =0.205 me, adopted as the best estimate for mb.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.