Scaling and the metal-insulator transition in Si/SiGe quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 20, 1997, Pages R12741-R12743

  Lam, J ^a   D'Iorio M ^b   Brown, D ^b   Lafontaine, H ^b  

^a UNIVERSITY OF OTTAWA   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000523264     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.R12741     Document Type: Article

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