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Physical Review Letters

Volumn 88, Issue 19, 2002, Pages 1964041-1964044

Low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers

(8) Pudalov, V M a,b Gershenson, M E a Kojima, H a Butch, N a Dizhur, E M c Brunthaler, G d Prinz, A d Bauer, G d

a RUTGERS UNIVERSITY (United States)

b LEBEDEV PHYSICAL INSTITUTE (Russian Federation)

c INSTITUTE FOR HIGH PRESSURE PHYSICS (Russian Federation)

d JOHANNES KEPLER UNIVERSITY LINZ (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRONS; FERMI LEVEL; GROUND STATE; MAGNETIC FIELD EFFECTS; MAGNETIC SUSCEPTIBILITY; MAGNETORESISTANCE; METAL INSULATOR TRANSITION; MOS DEVICES; OSCILLATIONS;

MOBILE ELECTRONS;

SEMICONDUCTING SILICON;

EID: 0037071376 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.88.196404 Document Type: Article

Times cited : (230)

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