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Volumn 75, Issue 19, 2007, Pages

Intervalley scattering and weak localization in Si-based two-dimensional structures

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[No Author keywords available]

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EID: 34347348228     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.195330     Document Type: Article
Times cited : (29)

References (33)
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    • ΔV was estimated from fitting the low-temperature σ (T) data (Ref.) with the theory of interaction corrections, where valley splitting was explicitly taken into account [see PRBMDO 0163-1829 10.1103/PhysRevB.67.113310
    • ΔV was estimated from fitting the low-temperature σ (T) data (Ref.) with the theory of interaction corrections, where valley splitting was explicitly taken into account [see S. A. Vitkalov, K. James, B. N. Narozhny, M. P. Sarachik, and T. M. Klapwijk, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.113310 67, 113310 (2003)]. For samples Si6-14 Δv was estimated to be less than 0.3 K, for Si39-less than 2 K, and for Si40-less than 6 K. Additionally, for all three samples, Δv was estimated from the absence of valley-related features (beats) in SdH oscillations of ρxx in weak magnetic fields (for Si6-14 Δv is less than 0.5 K, for Si39-less than 2 K, for Si40-less than 6 K).
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