The metalliclike conductivity of a two-dimensional hole system

Physical Review Letters

Volumn 80, Issue 6, 1998, Pages 1288-1291

  Hanein, Y ^a,b   Meirav, U ^a   Shahar, D ^a,b   Li, C C ^b   Tsui, D C ^b   Shtrikman, Hadas ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; MAGNETIC FIELDS; MOSFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TEMPERATURE;

INVERTED SEMICONDUCTOR INSULATOR SEMICONDUCTOR; METAL INSULATOR TRANSITION; TWO DIMENSIONAL HOLE SYSTEM;

ELECTRIC CONDUCTIVITY OF SOLIDS;

EID: 0032498486     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.80.1288     Document Type: Article

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