Growth condition dependence of the photoluminescence properties of InxGa1-xN/InyGa1-yN multiple quantum wells grown by MOCVD

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2613-2616

  Harris, Janet C ^a   Brisset, Helene ^a   Someya, Takao ^a   Arakawa, Yasuhiko ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

InGaN; MOCVD; Photoluminescence; Quantum wells

Indexed keywords

EID: 0000104044     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2613     Document Type: Article

References (10)

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3. See J. Ou, W.-K. Chen, H.-C. Lin, Y.-C. Pan and M.-C. Lee: Jpn. J. Appl. Phys. 37 (1998) L633, and references therein.
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5. T. Someya, K. Tachibana, M. Nishioka and Y. Arakawa: Proc. 17th Electronic Materials Symposium, Shizuoka, 1998, p. 253.
6. The energy of recombination may also affected by well width andpiezoelectric fields. Well widths in our samples are believed to be constant except for a small correction related to indium content (see §2). The strength of piezoelectric fields depends on indium content and screening, photoexcited carriers giving some screening and dopant ions perhaps more complete screening.9,10) Within doped series the correction needed should thus be almost zero, within undoped scries very small, in comparing doped and undoped samples at most a few nanometers.
7. S. Keller, B. P. Keller, D. Kapolnek, U. K. Mishra, S. P. DenBaars, I. K.Shmagin, R. M. Kolbas and S. Krishnankutty: J. Cryst. Growth 170 (1997) 349.
8. S. Keller, B. P. Keller, D. Kapolnck, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra and S. P. DenBaars: Appl. Phys. Lett. 68 (1996) 3147.
9. H. Sakai, T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Amano and I. Akasaki: J. Cryst. Growth 189/190 (1998) 831.
10. T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu and S. Nakamura: Appl. Phys. Lett. 72 (1998) 3329.