SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 163, Issue 3, 1996, Pages 195-202

On the formation of antiphase domains in the system of GaAs on Ge

(6) Li, Yuan a,c Salviati, G b Bongers, M M G a Lazzarini, L b Nasi, L b Giling, L J a

a RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

b CNR (Italy)

c NXP SEMICONDUCTORS (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ANTIPHASE DOMAINS; GROWTH RATE; OPTICAL INTERFERENCE CONTRAST MICROSCOPY; POLAR ON NONPOLAR HETEROEPITAXY; SUBSTRATE MISORIENTATION ANGLE;

CRYSTAL DEFECTS;

EID: 0030165093 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00958-2 Document Type: Article

Times cited : (69)

References (24)

1
- 0001031315
- L.C. Bobb, H. Holloway and K.H. Maxwell, J. Appl. Phys. 37 (1966) 4687.
- (1966) J. Appl. Phys. , vol.37 , pp. 4687
- Bobb, L.C.¹ Holloway, H.² Maxwell, K.H.³

2
- 0022669935
- H. Kroemer, J. Crystal Growth 81 (1987) 193.
- (1987) J. Crystal Growth , vol.81 , pp. 193
- Kroemer, H.¹

3
- 0001703905
- D.B. Holt, J. Phys. Chem. Solids 30 (1969) 1297.
- (1969) J. Phys. Chem. Solids , vol.30 , pp. 1297
- Holt, D.B.¹

4
- 0000832630
- P.M. Petroff, J. Vac. Sci. Technol. B 4 (1986) 874.
- (1986) J. Vac. Sci. Technol. B , vol.4 , pp. 874
- Petroff, P.M.¹

5
- 0041785079
- R.W. Grant, J.R. Waldrop, S.P. Kowalczyk and E.A. Kraut, J. Vac. Sci. Technol. B 3 (1985) 1295.
- (1985) J. Vac. Sci. Technol. B , vol.3 , pp. 1295
- Grant, R.W.¹ Waldrop, J.R.² Kowalczyk, S.P.³ Kraut, E.A.⁴

6
- 36549092004
- S. Strite, D. Biswas, N.S. Kumar, M. Fradkin and H. Morkoç, Appl. Phys. Lett. 56 (1990) 244.
- (1990) Appl. Phys. Lett. , vol.56 , pp. 244
- Strite, S.¹ Biswas, D.² Kumar, N.S.³ Fradkin, M.⁴ Morkoç, H.⁵

7
- 36549091128
- R. Fischer, H. Morkoç, D.A. Neumaan, H. Zabel, C. Choi, N. Otsuka, M. Longerbone and L.P. Erichson, J. Appl. Phys. 60 (1986) 1640.
- (1986) J. Appl. Phys. , vol.60 , pp. 1640
- Fischer, R.¹ Morkoç, H.² Neumaan, D.A.³ Zabel, H.⁴ Choi, C.⁵ Otsuka, N.⁶ Longerbone, M.⁷ Erichson, L.P.⁸

8
- 0023367109
- M. Kawabe and T. Ueda, Jpn. J. Appl. Phys. 26 (1987) L944.
- (1987) Jpn. J. Appl. Phys. , vol.26
- Kawabe, M.¹ Ueda, T.²

9
- 36449002529
- Y. Li, L. Lazzarini, L.J. Gilling and G. Salviati, J. Appl. Phys. 76 (1994) 5748.
- (1994) J. Appl. Phys. , vol.76 , pp. 5748
- Li, Y.¹ Lazzarini, L.² Gilling, L.J.³ Salviati, G.⁴

10
- 0030171976
- Y. Li and L.J. Giling, J. Crystal Growth 163 (1996) 203.
- (1996) J. Crystal Growth , vol.163 , pp. 203
- Li, Y.¹ Giling, L.J.²

11
- 0011530844
- J.H. Neave, P.K. Larsen, B.A. Joyce, J.P. Gowers and J.F. van der Veen, J. Vac. Sci. Technol. B 1 (1983) 668.
- (1983) J. Vac. Sci. Technol. B , vol.1 , pp. 668
- Neave, J.H.¹ Larsen, P.K.² Joyce, B.A.³ Gowers, J.P.⁴ Van Der Veen, J.F.⁵

12
- 0041176306
- K. Mizuguchi, N. Hayafuji, S. Ochi, T. Murotani and K. Fujikawa, J. Crystal Growth 77 (1986) 509.
- (1986) J. Crystal Growth , vol.77 , pp. 509
- Mizuguchi, K.¹ Hayafuji, N.² Ochi, S.³ Murotani, T.⁴ Fujikawa, K.⁵

13
- 0022667578
- P.R. Pukit and P.I. Cohen, J. Crystal Growth 81 (1987) 214.
- (1987) J. Crystal Growth , vol.81 , pp. 214
- Pukit, P.R.¹ Cohen, P.I.²

14
- 0026414659
- M. Grundmann, A. Krost and D. Bimberg, J. Crystal Growth 115 (1991) 150.
- (1991) J. Crystal Growth , vol.115 , pp. 150
- Grundmann, M.¹ Krost, A.² Bimberg, D.³

15
- 0026414672
- T. Suzuki, T. Soga, T. Jimbo and M. Umeno, J. Crystal Growth 115 (1991) 158.
- (1991) J. Crystal Growth , vol.115 , pp. 158
- Suzuki, T.¹ Soga, T.² Jimbo, T.³ Umeno, M.⁴

16
- 0028728442
- L. Lazzarini, Y. Li, P. Franzosi, L.J. Giling, L. Nasi, F. Longo, M. Urchulutegui and G. Salviati, Mater. Sci. Eng. B 28 (1994) 502.
- (1994) Mater. Sci. Eng. B , vol.28 , pp. 502
- Lazzarini, L.¹ Li, Y.² Franzosi, P.³ Giling, L.J.⁴ Nasi, L.⁵ Longo, F.⁶ Urchulutegui, M.⁷ Salviati, G.⁸

17
- 0001040198
- Ed. S. Mahajan Elsevier, Amsterdam
- J.L. Weyher, Handbook on Semiconductors, Vol. 3, Ed. S. Mahajan (Elsevier, Amsterdam, 1994) p. 995.
- (1994) Handbook on Semiconductors , vol.3 , pp. 995
- Weyher, J.L.¹

18
- 0000321374
- J.L. Weyher and J. van de Ven, J. Crystal Growth 63 (1983) 285.
- (1983) J. Crystal Growth , vol.63 , pp. 285
- Weyher, J.L.¹ Van De Ven, J.²

19
- 0007132792
- M. Kasu and N. Kobayashi, J. Appl. Phys. 78 (1995) 3026.
- (1995) J. Appl. Phys. , vol.78 , pp. 3026
- Kasu, M.¹ Kobayashi, N.²

20
- 0026963884
- G. Timò, C. Flores, B. Bollani, D. Passoni, C. Bocchi, P. Franzosi, L. Lazzarini and G. Salviati, J. Crystal Growth 125 (1992) 440.
- (1992) J. Crystal Growth , vol.125 , pp. 440
- Timò, G.¹ Flores, C.² Bollani, B.³ Passoni, D.⁴ Bocchi, C.⁵ Franzosi, P.⁶ Lazzarini, L.⁷ Salviati, G.⁸

21
- 0000531179
- S. Strite, M.S. Ünlü, K. Adomi, G.-B. Gao, A. Agarwal, A. Rochwtt, H. Morkoç, D. Li, Y. Nakamura and N. Otsuka, J. Vac. Sci. Technol. B 8 (1990) 1131.
- (1990) J. Vac. Sci. Technol. B , vol.8 , pp. 1131
- Strite, S.¹ Ünlü, M.S.² Adomi, K.³ Gao, G.-B.⁴ Agarwal, A.⁵ Rochwtt, A.⁶ Morkoç, H.⁷ Li, D.⁸ Nakamura, Y.⁹ Otsuka, N.¹⁰

22
- 0026360362
- Section 7
- P. Franzosi, L. Lazzarini, G. Salviati, M. Scaffardi and G. Timò, Inst. Phys. Conf. Ser. No. 117, Section 7 (1991) 399.
- (1991) Inst. Phys. Conf. Ser. No. 117 , vol.117 , pp. 399
- Franzosi, P.¹ Lazzarini, L.² Salviati, G.³ Scaffardi, M.⁴ Timò, G.⁵

23
- 0000347280
- H. Asai, J. Crystal Growth 80 (1987) 425.
- (1987) J. Crystal Growth , vol.80 , pp. 425
- Asai, H.¹

24
- 3643102422
- I. Kamiya, D.E. Aspnes, H. Tanaka, L.T. Florez, J.P. Harbison and R. Bhat, Phys. Rev. Lett. 68 (1992) 627.
- (1992) Phys. Rev. Lett. , vol.68 , pp. 627
- Kamiya, I.¹ Aspnes, D.E.² Tanaka, H.³ Florez, L.T.⁴ Harbison, J.P.⁵ Bhat, R.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.