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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 31-41

Power spectral densities: A multiple technique study of different Si wafer surfaces

(6) Marx, Egon a Malik, Igor J b Strausser, Yale E c Bristow, Thomas d Poduje, Noel e Stover, John C e

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

b Silicon Genesis (United States)

c Veeco Metrology (United States)

d Chapman Instruments (United States)

e ADE Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; INTERFEROMETRY; LIGHT SCATTERING; SAMPLING; SURFACE ROUGHNESS;

POWER SPECTRAL DENSITIES (PSD);

SILICON WAFERS;

EID: 0036124943 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1428267 Document Type: Conference Paper

Times cited : (36)

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