Optical characterization of dislocation free Ge and GeOI wafers

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 753-758

  Kalem, Seref ^a   Romandic, I ^b   Theuwis, A ^b  

^a SCIENTIFIC AND TECHNOLOGICAL RESEARCH COUNCIL OF TURKEY   (Turkey)

^b UMICORE   (Belgium)

Author keywords

Germanium (Ge); Germanium on insulator (GeOI)

Indexed keywords

BAND STRUCTURE; DISLOCATIONS (CRYSTALS); FOURIER TRANSFORM INFRARED SPECTROSCOPY; PRECIPITATION (CHEMICAL); RAMAN SCATTERING;

BAND SHRINKAGE; DOPING RELATED DISORDER; NON-NORMAL INCIDENCE; ROOM TEMPERATURE;

GERMANIUM;

EID: 33845197947     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.035     Document Type: Article

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