Gate dielectric degradation mechanism associated with DBIE evolution

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 117-121

  Pey, K L ^a   Ranjan, R ^a   Tung, C H ^b   Tang, L J ^a,b   Lin, W H ^c   Radhakrishnan, M K ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Breakdown; Dielectric breakdown induced epitaxy; Gate dielectric

Indexed keywords

DIELECTRIC BREAKDOWNS; GATE DIELECTRICS; HARD BREAKDOWNS (HBD); INDUCED EPITAXY;

DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; MOS DEVICES; PERCOLATION (SOLID STATE); TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILM DEVICES;

EID: 3042515092     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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3. L.J. Tang et al., "Gate dielectric breakdown induced microstructural damages in MOSFETs", Proc. IPFA, pp. 134-140, 2003.
4. K.L. Pey et al., "DIBE shape and hardness dependence on gate oxide breakdown location in MOSFET channel", Proc. IKPS, pp. 584-585, 2003.
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8. K.L. Pey et al., "Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern", IEDM Tech. Dig., 2002. pp. 166-169.
9. L.J. Tang et al., "Gate dielectric breakdown induced microstructural damage in MOSFETs", to be published in IEEE TDMR, Mar. 2004 Issue.
10. K.L. Pey et al., "Correlation of failure mechanism of constant-current stress and constant-voltage stress breakdowns in ultrathin gate oxides of nMOSFETs using TEM", Microelectronics Reliability, Vol. 43, 2003, pp. 1471-1476.
11. K.L. Pey et al., "Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors", Appl. Phys. Letts., Vol. 83 (14), Oct. 2003. pp. 2940-2942.