Improvement of efficiency droop in resonance tunneling LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7058, Issue , 2008, Pages

  Liu, Chaowang ^a   Wang, Wang N ^a   Shields, Philip A ^a   Denchitcharoen, Somyod ^a   Causa, Federica ^a   Allsopp, Duncan E W ^a  

^a University of Bath   (United Kingdom)

Author keywords

High efficiency; InGaN spacer; Light emitting diode; Low droop; Resonance tunnelling

Indexed keywords

ACTIVE REGIONS; APPLIED CURRENTS; CONTACT LAYERS; CURRENT LEAKAGES; DRIVING CURRENTS; ELECTRON BLOCKING LAYERS; ELECTRON RESERVOIRS; ELECTROPOTENTIAL; HIGH EFFICIENCIES; HIGH EFFICIENCY; INGAN SPACER; LED STRUCTURES; LOW DROOP; MULTIPLE QUANTUM WELLS; RESONANCE TUNNELING; STRAIN RELIEFS; WAVELENGTH SHIFTS;

GALLIUM NITRIDE; LIGHT EMITTING DIODES; MAGNESIUM; RESONANCE; SEMICONDUCTING GALLIUM; TUNNELING (EXCAVATION);

SEMICONDUCTOR QUANTUM WELLS;

EID: 55549139174     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.801322     Document Type: Conference Paper

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