Boron diffusion profiles in ultrathin silicon-on-insulator structures and their relation to crystalline quality

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 7 A, 2002, Pages 4436-4441

  Uchida, Hideo ^a   Ichimura, Masaya ^a   Arai, Eisuke ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Boron; Diffusion; ELTRAN; Silicon on insulator; SIMOX; UNIBOND

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); POINT DEFECTS; SEMICONDUCTING BORON; SILICON WAFERS; SINTERING; SUBSTRATES; THERMOOXIDATION;

CRYSTALLINE QUALITY; ELTRAN; INTERNAL THERMAL OXIDATION; INTERSTITIAL SILICON; SEPARATION BY IMPLANTED OXYGEN; ULTRATHIN SILICON-ON-INSULATOR STRUCTURE; UNIBOND;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036655972     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4436     Document Type: Article

References (11)