A 90 nm generation copper dual damascene technology with ALD TaN barrier

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 603-606

  Peng, C H ^a   Hsieh, C H ^a   Huang, C L ^a   Lin, J C ^a   Tsai, M H ^a   Lin, M W ^a   Chang, C L ^a   Shue, Winston S ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMIGRATION; LEAKAGE CURRENTS; PHYSICAL VAPOR DEPOSITION; TANTALUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DAMASCENE TECHNOLOGY;

INTEGRATED CIRCUITS;

EID: 0036927883     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2002.1175913     Document Type: Article

References (8)

1. S.Q. Wang, Mater. Res. Bull. 19 (1994) 30.
2. M. Ritala, et al., J. Electrochem. Soc. 145 (1999) 2914.
3. S. Haukk, et al., Proc. of IITC (2002) 279.
4. W. Besling, et al., Proc. of IITC (2002) 288.
5. M. Juppo, et al., J. Electrochem. Soc. 147 (2000) 3377.
6. J. S. Park, et al., Electrochem. Solid State Lett. 4 (2001) C17.
7. P. Alen, et al., J. Mater. Res. 17 (2002) 107.
8. J. W. Klaus, et al., Appl. Surf. Sci. 162-163 (2000) 479.