Resonant tunneling in electrically biased multibarrier systems

Physica B: Condensed Matter

Volumn 403, Issue 17, 2008, Pages 2780-2788

  Mahapatra, P K ^a   Panchadhyayee, P ^a,b   Bhattacharya, S P ^a   Khan, Arif ^c  

^a VIDYASAGAR UNIVERSITY   (India)

^b P K College   (India)

^c Electrocom Corporation   (United States)

Author keywords

Current density; Electric field; Multibarrier resonant tunneling; Transmission coefficient

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; GALLIUM; PROBABILITY DENSITY FUNCTION; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM DOTS; TUNNELING (EXCAVATION);

AIRY FUNCTIONS; APPLIED VOLTAGES; COMMON PROBLEMS; COMPUTATIONAL MODELS; CURRENT DENSITY; ELECTRIC FIELD; MULTI-BARRIER SYSTEMS; MULTIBARRIER RESONANT TUNNELING; NEGATIVE DIFFERENTIAL CONDUCTIVITIES; NUMERICAL COMPUTATIONS; QUANTITATIVE AGREEMENTS; RESONANT PEAKS; TRANSFER MATRICES; TRANSMISSION COEFFICIENT; UNIFORM ELECTRIC FIELDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 55249089624     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.02.008     Document Type: Article

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