Prediction of diffusion length in multicrystalline silicon solar cells from trapping images on starting material

Progress in Photovoltaics: Research and Applications

Volumn 15, Issue 4, 2007, Pages 331-336

  Schubert, Martin C ^a   Warta, Wilhelm ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

CDI; Crystal defects; Diffusion length; ILM; ITM; Multicrystalline silicon; SR LBIC; Trapping

Indexed keywords

DEFECT DENSITY; DIFFUSION; IMAGE ANALYSIS; PROCESS CONTROL; SILICON WAFERS;

DIFFUSION LENGTH; DIFFUSION LENGTH MEASUREMENTS; MULTICRYSTALLINE SILICON SOLAR CELLS; TRAPPING EFFECT;

SILICON SOLAR CELLS;

EID: 34248213077     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.738     Document Type: Article

References (19)

1. Hornbeck JA, Haynes JR. Trapping of minority carriers in silicon. I. P-type silicon. Physical Review, 1955; 97: 311.
2. Macdonald D, Cuevas A. Trapping of minority carriers in multicrystalline silicon. Applied Physics Letters 1999; 1710-1712.
3. Sinton RA, Cuevas A, Stuckings M. Quasi-steady-state photoconductance, a new method for solar cell material and device characterization. In Proceedings of the 25th IEEE Photovoltaic Specialists Conference. IEEE: New York, NY, USA, 1996; 457-460.
4. Riepe S, Isenberg J, Ballif C, Glunz SW, Warta W. Carrier density and lifetime imaging of silicon wafers by infrared lock-in thermography. In Proceedings of the 17th European Photovoltaic Solar Energy Conference, McNelis B, Palz W, Ossenbrink HA, Helm P (eds). WIP-Munich and ETA-Florence: Munich, Germany, and Florence, Italy, 2001; 1597-1599.
5. Schubert MC, Isenberg J, Warta W. Spatially resolved lifetime imaging of silicon wafers by measurement of infrared emission. Journal of Applied Physics 2003; 4139-4143.
6. Bail M, Kentsch J, Brendel R, Schulz M. Lifetime mapping of Si wafers by an infrared camera. In Proceedings of the 28th IEEE Photovoltaics Specialists Conference. Institute of Electrical and Electronics Engineers, 2000; 99-103.
7. Macdonald D, Kerr M, Cuevas A. Boron-related minority-carrier trapping centers in p-type silicon. Applied Physics Letters 1999; 1571-1573.
8. Macdonald D, Cuevas A. Understanding carrier trapping in multicrystalline silicon. Solar Energy Materials and Solar Cells 2001; 509-516.
9. Dekkers HFW, Carnel C, Beaucarne G. Carrier trap passivation in mullicrystalline Si solar cells by hydrogen from SiNx:H layers. Applied Physics Letters 2006; 013508-013510.
10. Schubert MC, Isenberg J, Rein S, Bermejo S, Glunz SW, Warta W. Injection dependent carrier density imaging measurements including corrections for trapping effects. 20th EU-PVSEC. WIP Munich and ETA Florence: Munich. Germany, and Florence, Italy, 2005; 1202-1205.
11. Pohl P, Schmidt J, Bothe K, Brendel R. Mapping of trap densities and energy levels in semiconductors using a lock-in infrared camera technique. Applied Physics Letters 2005; 142104.
12. Warta W, Schubert MC, Isenberg J, Bermejo S, Riepe S, Diez S. 15th Workshop of Crystalline Silicon Solar Cells and Modules. NREL: Golden, CO, 2005; 142.
13. Pohl P, Schmidt J, Bothe K, Brendel R. Trap density imaging of silicon wafers using a lock-in infrared camera technique. 4th WCPEC, 2006 (in print).
14. Schubert MC, Riepe S. Bermejo S. Warta W. Determination of spatially resolved trapping parameters in silicon with injection dependent carrier density imaging. Journal of Applied Physics 2006; 114908.
15. Schultz O, Riepe S, Glunz SW. Thermal degradation and gettering of solar grade multicrystalline silicon. In Proceedings of the 19th European Photovoltaic Solar Energy Conference, Hoffmann J-LBW, Ossenbrink H. Palz W. Helm P (eds). WIP Munich and ETA Florence: Munich, Germany, and Florence. Italy, 2004; 516-519.
16. Neuhaus DH, Cousins PJ, Aberle AG. Trapping and junction-related perturbations of the effective excess carrier lifetime. In 3rd World Conference on Photovoltaic Energy Conversion. Kurokawa K, Kazmerski LL. McNelis B. Yamaguehi M, Wronski C, Sinke WC (eds). Arisumi Printing, Inc.: Japan, 2003; 91-94.
17. Warta W, Sutter J, Wagner BF, Schindler R. Impact of diffusion length distributions on the performance of mc-silicon solar cells. In Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion, Schmid J, Ossenbrink HA. Helm P, Ehmann H, Dunlop ED (eds). European Commission: Ispra. Italy, 1998; 1650-1653.
18. Sinton RA. Predicting multi-crystalline solar cell efficiency from lifetime measured during cell fabrication. In Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, Kurokawa K, Kazmerski LL, McNelis B, Yamaguchi M, Wronski C, Sinke WC (eds). WCPEC-3 Organizing Committee: Arisumi printing. 2003; 1028-1031.
19. Schubert MC. Riepe S. Warta W. Spatially resolved trapping detectino and correlation with material quality in multicrystalline silicon. 21th EU-PVSEC. WIP Munich and ETA Florence: Munich, Germany, and Florence. Italy, 2006 (in print).