Determination of spatially resolved trapping parameters in silicon with injection dependent carrier density imaging

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Schubert, Martin C ^a   Riepe, Stephan ^b   Bermejo, Sandra ^a   Warta, Wilhelm ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DATA ACQUISITION; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; IMAGE PROCESSING; MATHEMATICAL MODELS;

INFRARED LIFETIME IMAGING; INJECTION DEPENDENT CARRIER DENSITY IMAGING; TRAP-ESCAPE RATIO;

SILICON;

EID: 33745226701     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202729     Document Type: Article

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