Interface effects of Pb(Zr,Ti)O3 thin film capacitors with Pt, IrO2 and SrRuO3 top electrodes

Ferroelectrics

Volumn 357, Issue 1 PART 3, 2007, Pages 276-282

  Nozaka, Takashi ^a   Masuda, Yoichiro ^b  

^a Yokohama Denshi Seiko Co Ltd   (Japan)

^b HACHINOHE INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

IrO2; Pb(Zr,Ti)O3; Platinum(Pt); SrRuO3; TEM EDX analysis

Indexed keywords

ALTERATION LAYER; C-V CHARACTERISTIC; CRYSTALLINE DEFECTS; DIELECTRIC DISPERSION; INTERFACE EFFECT; INTERFACE STRUCTURES; IRO2; PB(ZR ,TI)O; PZT; PZT THIN FILM; SCHOTTKY BARRIERS; TEM-EDX; THIN-FILM CAPACITORS;

CAPACITANCE; CAPACITORS; ELECTRODES; FERROELECTRICITY; LEAD; OHMIC CONTACTS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING LEAD COMPOUNDS; THIN FILM CIRCUITS; THIN FILM DEVICES; THIN FILMS; ZIRCONIUM;

PLATINUM;

EID: 55149093232     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190701545581     Document Type: Conference Paper

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