On the emitter resistance of high-performance gaas- and inp-based heterojunction bipolar transistors

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 1, 2008, Pages 4441-4447

  Matsuoka, Yutaka ^a   Ohkubo, Yukio ^a   Matsumoto, Taisuke ^a   Koji, Takashi ^a   Amano, Yoshiaki ^a   Takagi, Akio ^a  

^a ANRITSU CORPORATION   (Japan)

Author keywords

DHBT; Emitter resistance; Fmax; Ft; GaAs; HFE; HBT; Ideality factor; InP; Ledge; Passivation; Self aligned

Indexed keywords

BIPOLAR TRANSISTORS; GALLIUM ALLOYS; HETEROJUNCTIONS; IRON COMPOUNDS; PASSIVATION; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM; SYSTEM THEORY; TRANSISTORS;

DHBT; EMITTER RESISTANCE; FMAX; FT; GAAS; HFE; HBT; IDEALITY FACTOR; INP; LEDGE; SELF-ALIGNED;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 55049104531     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.4441     Document Type: Article

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