High-speed InP HBT technology for advanced mixed-signal and digital applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 671-674

  Monier, C ^a   Scott, D ^a   D'Amore, M ^a   Chan, B ^a   Dang, L ^a   Cavus, A ^a   Kaneshiro, E ^a   Nam, P ^a   Sato, K ^a   Cohen, N ^a   Lin, S ^a   Luo, K ^a   Wang, J ^a   Oyama, B ^a   Gutierrez, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHLORINE COMPOUNDS; DIGITAL ARITHMETIC; ELECTRON DEVICES; METALS; OPTICAL INTERCONNECTS; SPEED; TECHNOLOGY;

4-LEVEL; DEFENSE APPLICATIONS; DIGITAL APPLICATIONS; HETEROJUNCTION TECHNOLOGIES; HIGH SPEEDS; INP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; INP-HBT; MANUFACTURING CAPABILITIES; MIXED SIGNALS; SUB MICRONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 50249105796     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419033     Document Type: Conference Paper

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