Highly reliable InP-based HBTs with a ledge structure operating at current density over 2 mA/μm 2

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 339-342

  Fukai, Yoshino K ^a   Kurishima, Kenji ^a   Ida, Minoru ^a   Yamahata, Shoji ^a,b   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISCRETE TRANSISTORS; LEDGE STRUCTURE; STRESS CURRENT DENSITY;

CURRENT DENSITY; RELIABILITY; SEMICONDUCTING INDIUM PHOSPHIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33747403045     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517496     Document Type: Conference Paper

References (2)

1. K. Kurishima, et. al. "DC characteristics of InP HBTs under high-temperature and bias stress",SSDM2001.
2. R. Yamabi, et. al. "Reliability of InGaAs/InP HBTs with InP Passivation Structure", IPRM2003.