Effect of plasma power on structure of hydrogenated nanocrystalline cubic silicon carbide films deposited by very high frequency plasma-enhanced chemical vapor deposition at a low substrate temperature

Japanese Journal of Applied Physics

Volumn 47, Issue 5 PART 1, 2008, Pages 3368-3371

  Miyajima, Shinsuke ^a   Sawamura, Makoto ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical vapor deposition; Low temperature deposition; Silicon carbide; Solar cells; Structural properties

Indexed keywords

CHEMICAL PROPERTIES; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; EPITAXIAL GROWTH; HYDROGEN; HYDROGENATION; HYDROGENOLYSIS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMAS; SILICON; SILICON CARBIDE; SOLAR ENERGY; VAPORS;

ATOMIC HYDROGEN DENSITIES; CUBIC SILICON CARBIDES; FILM STRUCTURES; H FILMS; LOW-TEMPERATURE DEPOSITION; NANOCRYSTALLINE; PLASMA POWERS; SUBSTRATE TEMPERATURES; VERY HIGH FREQUENCY PLASMAS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 55049101191     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3368     Document Type: Article

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