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Chemistry of Materials

Volumn 12, Issue 10, 2000, Pages 2822-2824

Observation of precursor control over film stoichiometry during the chemical vapor deposition of amorphous Ti(x)Si(1-x)O2 films

(8) Smith, R C a Taylor, C J a Roberts, J a Campbell, S A a Tiner, M b Hegde, R b Hobbs, C b Gladfelter, W L a

a University of Minnesota (United States)

b MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE; SILICON DIOXIDE; TIN DERIVATIVE;

ARTICLE; CHEMICAL REACTION; FILM; HYPOBARISM; REACTION ANALYSIS; STOICHIOMETRY; TEMPERATURE; THICKNESS; VAPOR;

EID: 0033791444 PISSN: 08974756 EISSN: None Source Type: Journal
DOI: 10.1021/cm0003222 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.