Sputter-induced defects in Zn-doped GaAs Schottky diodes

Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages 127-132

  Arakaki, Hisashi ^a,b   Ohashi, Kazutoshi ^a   Sudou, Tomoko ^a,c  

^a TAMAGAWA UNIVERSITY   (Japan)

^b Digital Stream Corporation   (Japan)

^c Moririca Electronics Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HETEROJUNCTIONS; ION BOMBARDMENT; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES; THRESHOLD VOLTAGE; ZINC;

FERMI LEVEL PINNING; SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0346497610     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/1/021     Document Type: Article

References (39)

1. Vandenbroucke D A, Van Meirhaeghe R L, Laflere W H and Cardon F 1987 Semicond. Sci. Technol. 2 293
2. Straayer A, Hellings G J A, van Beek F M and van der Maesen F 1986 J. Appl. Phys. 59 2471
3. Hellings G J A, Straayer A and Kipperman A H M 1985 J. Appl. Phys. 57 2067
4. Mullins F H and Brunnschweiler A 1976 Solid-State Electron. 19 47
5. Yamasaki K, Asai K, Shimada K and Makimura T 1982 J. Electrochem. Soc. 129 2760
6. Wang Y X and Holloway P H 1984 J. Vac. Sci. Technol. A 2 567
7. Chiang S Y and Pearson G L 1975 J. Appl. Phys. 46 2986
8. Baraff G A and Schluter M 1978 Phys. Rev. Lett. 41 892 Baraff G A and Schluter M 1979 Phys. Rev. B 19 4965
9. Baraff G A and Schluter M 1978 Phys. Rev. Lett. 41 892 Baraff G A and Schluter M 1979 Phys. Rev. B 19 4965
10. Luken K M and Morrow R A 1996 Semicond. Sci. Technol. 11 1156
11. Pons D and Bourgoin J 1981 Phys. Rev. Lett. 47 1293
12. Pons D and Bourgoin J C 1985 J. Phys. C: Solid State Phys. 18 3839
13. D Pons, Mircea A and Bourgoin J 1980 J. Appl. Phys. 51 4150
14. Bourgoin J C, von Bardeleben H J and Stievenard D 1988 J. Appl. Phys. 64 R65
15. Stievenard D, Boddaert X and Bourgoin J C 1986 Phys. Rev. B 34 4048
16. Stievenard D, Boddaert X, Bourgoin J C and von Bardeleben H J 1990 Phys. Rev. B 41 5271
17. Mead C A and Spitzer W G 1963 Phys. Rev. Lett. 10 471
18. Walpole J N and Nill K W 1971 J. Appl. Phys. 42 5609
19. Kajiyama K, Mizushima Y and Sakata S 1973 Appl. Phys. Lett. 23 458
20. Lakhani Amir A 1984 J. Appl. Phys. 56 1888
21. Edweeb Mousa E, Charlson E J and Charlson E M 1983 Appl. Phys. Lett. 43 572
22. Spicer W E, Lindau I, Skeath P, Su C Y and Chye Patrick 1980 Phys. Rev. Lett. 44 420
23. Spicer W E, Liliental-Weber Z, Weber E, Newman N, Kendelewicz T, Cao R, McCants C, Mahowald P, Miyano K and Lindau I 1988 J. Vac. Sci. Technol. B 6 1245
24. Woodall J M and Freeouf J L 1981 J. Vac. Sci. Technol. 19 794
25. Tersoff J 1984 Phys. Rev. Lett. 52 465
26. Brillson L J 1978 J. Vac. Sci. Technol. 15 1378
27. Tung R T 1992 Phys. Rev. B 45 13509
28. Loualiche S, Nouailhat A, Guillot G, Gavand M, Laugier A and Bourgoin J C 1982 J. Appl. Phys. 53 8691
29. Auret F D, Goodman S A, Meyer W E, Erasmus R M and Myburg G 1993 Japan. J. Appl. Phys. 32 L974
30. Auret F D, Goodman S A and Meyer W E 1995 Semicond. Sci. Technol. 10 1376
31. Brehme S, Krispin P and Lubyshev D I 1992 Semicond. Sci. Technol. 7 467
32. Yu Phil Won, Mitchel W C, Mier M G, Li S S and Wang W L 1982 Appl. Phys. Lett. 41 532
33. Elliott K R 1983 Appl. Phys. Lett. 42 274
34. Bugajski M, Ko K H, Lagowski J and Gatos H C 1989 J. Appl. Phys. 65 596
35. Roos G, Schöner A, Pensl G, Wagner J, Meyer B K and Newman R C 1991 J. Appl. Phys. 69 1454
36. Brozel M R, Newman R C and Totterdell D H J 1975 J. Phys. C: Solid State Phys. 8 243
37. Woodhead J and Newman R C 1981 J. Phys. C: Solid State Phys. 14 L345
38. Venugopalan H S, Mohney S E, DeLucca J M and Molnar R J 1999 Semicond. Sci. Technol. 14 757
39. Wagener M C, Botha J R and Leitch A W R 1999 Semicond. Sci. Technol. 14 1080