Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures

Advanced Materials

Volumn 20, Issue 5, 2008, Pages 1038-1043

  De Sousa Pereira, Sérgio Manuel ^a   Martins, Manuel António ^a   Trindade, Tito ^a   Watson, Ian M ^b   Zhu, Diane ^c   Humphreys, Colin J ^c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTALS; DIAMONDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTING GALLIUM; SOIL CONSERVATION; SUBSTRATES;

AREAS OF INTERESTS; EPITAXIAL HETEROSTRUCTURE; EPITAXIAL STRUCTURES; GAN BUFFERS; HETEROSTRUCTURES; HEXAGONAL; HEXAGONAL PITS; IMAGING; INGAN/GAN MQWS; NANOSCALE; REACTOR PRESSURES; SAPPHIRE SUBSTRATES; SPONTANEOUS FORMATIONS; SUBSTRATE ROTATIONS; THREADING DISLOCATION DENSITIES; TRIMETHYLGALLIUM; TRIMETHYLINDIUM; WAFER MATERIALS;

HETEROJUNCTIONS;

EID: 54949103526     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200701739     Document Type: Article

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