Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 84-86

  Radamson, H H ^a   Kolahdouz, M ^a   Ghandi, R ^a   Hallstedt J ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

HCl etch; pMOSFET; Selective epitaxy growth; SiGe

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS;

CHEMICAL VAPOR ETCHINGS; HCL ETCH; PATTERN DEPENDENCIES; PMOS TRANSISTORS; PMOSFET; RECESSED SOURCE/DRAIN; SELECTIVE EPITAXIAL GROWTHS; SELECTIVE EPITAXY GROWTH; SIGE; SIGE LAYERS; SOURCE AND DRAINS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54849412777     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.106     Document Type: Article

References (16)

1. Ghani T., et al. (2003), IEDM 978
2. Thompson S., et al. IEEE Trans. Electron Devices 51 (2004) 1790
3. Norstrom H., Blom H.-O., Ostling M., Nylandsted Larsen A., Keikonen J., and Berg S. J. Vac. Sci. Technol., B 9 (1991) 34
4. Bogumilowicz Y., Hartmann J.M., Truche R., Campidelli Y., Rolland G., and Billon T. Semicond. Sci. Technol. 20 (2005) 127
5. Loo R., Caymax M., Richard O., Verheyen P., and Collaert N. Diffus. Defect Data Pt. B Solid State Phenom. 92 (2003) 199
6. Isheden C., Radamson H.H., Survar E., Hellstrom P.-E., and Ostling M. J. Electrochem. Soc. 151 (2004) 365
7. Loo R., et al. Appl. Surf. Sci. 224 (2004) 63
8. Hallstedt J., Ghandi R., Kolahdouz M., Ostling M., and Radamson H.H. Semicond. Sci. Technol. 22 (2007) 123
9. Bodnar S., de Berranger E., Bouillon P., Mouis M., Skotnicki T., and Regolini J.L. J. Vac. Sci. Technol., B Microelectron. Process. Phenom. 15 (1997) 712
10. Kamins T.I. J. Appl. Phys. 74 (1993) 5799
11. De Boer W.B., Terpstra D., and Dekker R. Mater. Res. Soc. Symp. Proc. 533 (1998) 315
12. Vescan L. Mater. Sci. Eng., B, Solid-State Mater. Adv. Technol. 28 (1994) 1
13. Radamson H.H., Hallstedt J., Survar E., Menon C., and Ostling M. Mater. Sci. Semicond. Process. 8 (2005) 25
14. Radamson H.H., and Hållstdet J. J. Phys. Condens. Matter 17 (2005) 2315
15. Gupta P., Coon P.A., Koeler B.G., and Georges S.M. J. Chem. Phys. 93 (1990) 2827
16. Ghandi R., Kolahdouz M., Hållstedt J., Lu J., Wise R., Wejtmans H., Östling M., and Radamson H.H. J. Mater. Sci., Mater. Electron. 18 (2007) 747