Defect-free Si thinning by in situ HCl vapour etching

Solid State Phenomena

Volumn 92, Issue , 2003, Pages 199-202

  Loo, Roger ^a   Caymax, Matty ^a   Richard, Olivier ^a   Verheyen, Peter ^a   Collaert, Nadine ^a  

^a IMEC   (Belgium)

Author keywords

Epitaxial growth; In situ vapour HCl etch; Si thinning

Indexed keywords

CONTAMINATION; DEGRADATION; EPITAXIAL GROWTH; ETCHING; HETEROJUNCTIONS; HYDROCHLORIC ACID; SILICON ON INSULATOR TECHNOLOGY; SURFACES; INDIUM COMPOUNDS;

CRYSTAL QUALITY; IN SITU CHEMICAL VAPOUR ETCHING; SILICON THINNING; CHEMICAL VAPOURS; EPITAXIAL GROWTH SYSTEM; ETCH-BACK TECHNIQUE; FACET FORMATION; LATERAL EPITAXIAL OVERGROWTH; PATTERNED WAFERS; PROCESS CONDITION; SHALLOW SOURCES;

SILICON WAFERS;

EID: 0038039292     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (4)

1. L.F. Giles, A. Nejim, C.D. Marsh, P.L.F. Hermment and G.R. Booker, 1993 IEEE International SOI Conference Proceedings, New York (USA), p. 54-55 (1993)
2. S. Gannayaram, N. Pesove, M. C. Öztürk, International Electronic Device Meeting 2000 (IEDM 2000), p 437-440
3. R. Loo, M. Caymax, I. Peytier, S. Decoutere, N. Collaert, P. Verheyen, W. Vandervorst, and K. De Meyer, to be submitted to J. Appl. Phys.
4. N. Collaert, P. Verheyen, K. De Meyer, R. Loo and M. Caymax, in proceedings of the VLSI Nanoelectronics workshop, June 9-10, Honolulu, 2002, p. 15-16