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Thin Solid Films

Volumn 295, Issue 1-2, 1997, Pages 147-150

The temperature dependence of the direct gap of β-FeSi2 films

(3) Ozvold M a Gasparik V b Dubnicka M b

a INSTITUTE OF PHYSICS (Slovakia)

b Physics and Informatics (Slovakia)

Author keywords

Band structure; Optical spectroscopy; Semiconductors; Silicides

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ELECTRON TRANSITIONS; ENERGY GAP; LIGHT ABSORPTION; OPACITY; PHONONS; SEMICONDUCTING FILMS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

OPTICAL TRANSMITTANCE SPECTROSCOPY; SEMICONDUCTING IRON DISILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031073241 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)09315-7 Document Type: Article

Times cited : (13)

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