Ion beam synthesis of β-FeSi2 as an IR photosensitive material

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3419, Issue , 1998, Pages 354-360

  Maeda, Yoshihito ^a   Akita, Tomoki ^a   Umezawa, Kenji ^a   Miyake, Kiyoshi ^a   Sagawa, Masakazu ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

FeSi2; 56Fe+ ion implantation; Ion beam synthesis; IR photosensor

Indexed keywords

ANNEALING; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; INFRARED RADIATION; ION IMPLANTATION; IRON COMPOUNDS; PHOTOLUMINESCENCE; PHOTOSENSITIVITY; PHOTOVOLTAIC EFFECTS; POLYCRYSTALLINE MATERIALS; SYNTHESIS (CHEMICAL);

ION BEAM SYNTHESIS;

LIGHT SENSITIVE MATERIALS;

EID: 0032402192     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.311028     Document Type: Conference Paper

References (17)