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Volumn 47, Issue 4 PART 2, 2008, Pages 3036-3040
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Oriented growth of location-controlled Si crystal grains by Ni nano-imprint and excimer laser annealing
a
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Author keywords
Excimer laser annealing; Location and orientation control; Metal induced crystallization; Ni nano imprint; Poly Si; Thin film transistor
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Indexed keywords
AMORPHOUS SILICON;
ANNEALING;
BACKSCATTERING;
CRYSTAL STRUCTURE;
CRYSTALLIZATION;
EXCIMER LASERS;
GAS LASERS;
GRAIN (AGRICULTURAL PRODUCT);
LASERS;
METAL ANALYSIS;
METAL RECOVERY;
NANOCRYSTALLINE ALLOYS;
NICKEL;
NICKEL ALLOYS;
POWDERS;
SILICIDES;
SILICON;
THIN FILM DEVICES;
THIN FILM TRANSISTORS;
AMORPHOUS SIS;
CRYSTAL AXIS;
ELECTRON BACKSCATTERING PATTERNS;
EXCIMER LASER ANNEALING;
NI NANO-IMPRINT;
NI-SILICIDE;
ORIENTED GROWTHS;
POLY-SI;
SI CRYSTALS;
SI FILMS;
THIN-FILM STRUCTURES;
THIN-FILM TRANSISTOR;
CRYSTAL ORIENTATION;
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EID: 54249165931
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.3036 Document Type: Article |
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Times cited : (2)
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References (14)
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