CMOS application of single-grain thin film transistor produced using metal imprint technology

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1983-1987

  Makihira, Kenji ^a   Yoshii, Masahito ^a   Asano, Tanemasa ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Grain positioning; Imprint; Poly Si TFT; Polycrystalline silicon; Solid phase crystallization; Thin film transistor

Indexed keywords

CRYSTALLIZATION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

GRAIN POSITIONING; METAL IMPRINT TECHNOLOGY; SOLID PHASE CRYSTALLIZATION;

CMOS INTEGRATED CIRCUITS;

EID: 0038348028     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1983     Document Type: Article

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