Location and orientation control of Si grain by combining metal-induced lateral crystallization and excimer laser annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 B, 2006, Pages 4347-4350

  Higashi, Naoyuki ^a   Nakagawa, Gou ^a   Asano, Tanemasa ^a   Miyasaka, Mitsutoshi ^b   Stoemenos, John ^c  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

ELA; Laser annealing; Metal induced crystallization; MILC; Orientation control; Poly Si; Single grain; TFT; Thin film transistor

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLIZATION; EXCIMER LASERS; THIN FILM TRANSISTORS;

ELA; LASER ANNEALING; METAL INDUCED CRYSTALLIZATION; MILC; ORIENTATION CONTROL; SINGLE GRAIN; TFT;

POLYSILICON;

EID: 33744462365     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4347     Document Type: Article

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