SCOPUS 정보 검색 플랫폼

Volumn 47, Issue 4 PART 2, 2008, Pages 2410-2414

Internal photoemission over HfO2 and Hf(1-x)Si xO2 high-k insulating barriers: Band offset and interfacial dipole characterization

(5) Widiez, Julie a Kita, Koji a Tomida, Kazuyuki a Nishimura, Tomonori a Toriumi, Akira a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

Band offset; Band gap width; Electron energy barrier; Energy band diagram; High k dielectric; Interfacial dipole; Internal photoemission; Semiconductor insulator interfaces; Spectroscopic ellipsometry

Indexed keywords

ALUMINA; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELLIPSOMETRY; EMISSION SPECTROSCOPY; HAFNIUM; HAFNIUM COMPOUNDS; INTERFACIAL ENERGY; OXIDES; PHOTOELECTRICITY; PHOTOEMISSION; SILICA; SILICON; SILICON COMPOUNDS; SMELTING; SPECTROSCOPIC ELLIPSOMETRY;

BAND OFFSET; BAND-GAP WIDTH; ELECTRON ENERGY BARRIER; ENERGY BAND DIAGRAM; HIGH-K DIELECTRIC; INTERFACIAL DIPOLE; INTERNAL PHOTOEMISSION; SEMICONDUCTOR/INSULATOR INTERFACES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54249163639 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.2410 Document Type: Article

Times cited : (27)

References (17)

1
- 79956033267
- Y.-C. Yeo, T.-J. King, and C. Hu: Appl. Phys. Lett. 81 (2002) 2091.
- (2002) Appl. Phys. Lett , vol.81 , pp. 2091
- Yeo, Y.-C.¹ King, T.-J.² Hu, C.³

2
- 0034187380
- J. Robertson: J. Vac. Sci. Technol. B 18 (2000) 1785.
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1785
- Robertson, J.¹

3
- 34547910897
- Symp. VLST Technology Dig
- C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedara, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White, and P. Tobin: Symp. VLST Technology Dig. Tech. Pap., 2003, p. 9.
- (2003) Tech. Pap , pp. 9
- Hobbs, C.¹ Fonseca, L.² Dhandapani, V.³ Samavedara, S.⁴ Taylor, B.⁵ Grant, J.⁶ Dip, L.⁷ Triyoso, D.⁸ Hegde, R.⁹ Gilmer, D.¹⁰ Garcia, R.¹¹ Roan, D.¹² Lovejoy, L.¹³ Rai, R.¹⁴ Hebert, L.¹⁵ Tseng, H.¹⁶ White, B.¹⁷ Tobin, P.¹⁸

4
- 33646866238
- Symp. VLSI Technology Dig
- E. Cartier, F. R. McFeely, V. Narayanan, P. Jamison, B. P. Linder, M. Copel, V. K. Paruchuri, V. S. Basker, R. Haight, D. Lim, R. Carruthers, T. Shaw, M. Steen, J. Sleight, J. Rubino, H. Deligianni, S. Guha, R. Jammy, and G. Shahidi: Symp. VLSI Technology Dig. Tech. Pap., 2005, p. 230.
- (2005) Tech. Pap , pp. 230
- Cartier, E.¹ McFeely, F.R.² Narayanan, V.³ Jamison, P.⁴ Linder, B.P.⁵ Copel, M.⁶ Paruchuri, V.K.⁷ Basker, V.S.⁸ Haight, R.⁹ Lim, D.¹⁰ Carruthers, R.¹¹ Shaw, T.¹² Steen, M.¹³ Sleight, J.¹⁴ Rubino, J.¹⁵ Deligianni, H.¹⁶ Guha, S.¹⁷ Jammy, R.¹⁸ Shahidi, G.¹⁹

5
- 33645696579
- C. C. Fulton, G. Lucovsky, and R. J. Nemanicha: J. Appl. Phys. 99 (2006) 063708.
- (2006) J. Appl. Phys , vol.99 , pp. 063708
- Fulton, C.C.¹ Lucovsky, G.² Nemanicha, R.J.³

6
- 33748959399
- H. Jin, S. K. Oh, and H. J. Kanga: Appl. Phys. Lett. 89 (2006) 122901.
- (2006) Appl. Phys. Lett , vol.89 , pp. 122901
- Jin, H.¹ Oh, S.K.² Kanga, H.J.³

7
- 0000343237
- V. K. Adamchuk and V. V. Afanas'ev: Prog. Surf. Sci. 41 (1992) 111.
- (1992) Prog. Surf. Sci , vol.41 , pp. 111
- Adamchuk, V.K.¹ Afanas'ev, V.V.²

8
- 33845392078
- V. V. Afanas'ev, M. Houssa, A. Stesmans, and M. M. Heyns: J. Appl. Phys. 91 (2002) 3079.
- (2002) J. Appl. Phys , vol.91 , pp. 3079
- Afanas'ev, V.V.¹ Houssa, M.² Stesmans, A.³ Heyns, M.M.⁴

9
- 0016330698
- D. J. DiMaria: J. Appl. Phys. 45 (1974) 5454.
- (1974) J. Appl. Phys , vol.45 , pp. 5454
- DiMaria, D.J.¹

10
- 0035858356
- V. V. Afanas'ev, M. Houssa, and A. Stesmans: Appl. Phys. Lett. 78 (2001) 3073.
- (2001) Appl. Phys. Lett , vol.78 , pp. 3073
- Afanas'ev, V.V.¹ Houssa, M.² Stesmans, A.³

11
- 36149025707
- J. Bardeen: Phys. Rev. 71 (1947) 717.
- (1947) Phys. Rev , vol.71 , pp. 717
- Bardeen, J.¹

12
- 4944238315
- J. K. Schaeffer, L. R. C. Fonseca, S. B. Samavedam, Y. Liang, P. J. Tobin, and B. E. White: Appl. Phys. Lett. 85 (2004) 1826.
- (2004) Appl. Phys. Lett , vol.85 , pp. 1826
- Schaeffer, J.K.¹ Fonseca, L.R.C.² Samavedam, S.B.³ Liang, Y.⁴ Tobin, P.J.⁵ White, B.E.⁶

13
- 54249086638
- Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi: Ext. Abstr. Solid State Devices and Materials, 2006, p. 212.
- Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi: Ext. Abstr. Solid State Devices and Materials, 2006, p. 212.

14
- 35948958613
- Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi: Jpn. J. Appl. Phys. 46 (2007) 7251.
- (2007) Jpn. J. Appl. Phys , vol.46 , pp. 7251
- Yamamoto, Y.¹ Kita, K.² Kyuno, K.³ Toriumi, A.⁴

15
- 0035881403
- D. A. Neumayer and E. Carder: J. Appl. Phys. 90 (2001) 1801.
- (2001) J. Appl. Phys , vol.90 , pp. 1801
- Neumayer, D.A.¹ Carder, E.²

16
- 0000354295
- P. M. Schneider and W. B. Fowler: Phys. Rev. Lett. 36 (1976) 425.
- (1976) Phys. Rev. Lett , vol.36 , pp. 425
- Schneider, P.M.¹ Fowler, W.B.²

17
- 4944247915
- ed. M. Houssa (IOP Publishing, Bristol, U.K, ) Chap. 4.2, p
- G. Lucovsky and J. Whitten: in High-k Gate Dielectrics, ed. M. Houssa (IOP Publishing, Bristol, U.K., 2004) Chap. 4.2, p. 325.
- (2004) High-k Gate Dielectrics , pp. 325
- Lucovsky, G.¹ Whitten, J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.