Two-Bit/cell characteristics of silicon-oxide-nitride-oxide-silicon flash memory devices with recessed channel structure

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2687-2691

  Han, Kyoung Rok ^a   Lee, Jong Ho ^a  

^a Kyungpook National University   (South Korea)

Author keywords

2 bit cell; Band to band hot hole injection (BtBHHI); Channel hot electron (CHE); Recessed channel; SONOS; Vth margin

Indexed keywords

DATA STORAGE EQUIPMENT; FLASH MEMORY; HOT CARRIERS; NITRIDES; SILICON;

2-BIT/CELL; BAND-TO-BAND HOT-HOLE INJECTION (BTBHHI); CHANNEL HOT ELECTRON (CHE); RECESSED CHANNEL; SONOS; VTH MARGIN;

MOSFET DEVICES;

EID: 54249129826     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2687     Document Type: Article

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